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PEROVSKITE OPTOELECTRONIC DEVICE PREPARATION METHOD THEREFOR AND PEROVSKITE MATERIAL
PEROVSKITE OPTOELECTRONIC DEVICE PREPARATION METHOD THEREFOR AND PEROVSKITE MATERIAL
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机译：钙钛矿光电子器件的制备方法及其钙钛矿材料
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摘要
The present invention relates to a perovskite photoelectric device, comprising a substrate 1, an electrode layer and a functional layer, an electrode layer is provided on the substrate surface, a functional layer is provided between the electrode layers, and the functional layer is at least perovskite Includes a layer. Here, the perovskite layer is a perovskite material having a self-assembled multi-quantum well structure, and it is possible to control the width of the multi-quantum well by controlling the material composition, and to enable effective energy transfer between the multi-quantum wells, and to emit light. Can be ultraviolet light, visible light, and near infrared light, and can effectively solve the discontinuous and poor stability problems of the conventional perovskite material thin film. Perovskite photoelectric devices are simple to process, inexpensive, and suitable for a wide range of applications in mass production of large area, low cost, flexible substrates, and high performance devices. Perovskite materials can be used in photoluminescence, electroluminescence, photovoltaic and thin film transistors.
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