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Quantum-dot light emitting diode Method of fabricating quantum-dot light emitting diode and quantum-dot light emitting display device
Quantum-dot light emitting diode Method of fabricating quantum-dot light emitting diode and quantum-dot light emitting display device
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机译：量子点发光二极管的制造方法量子点发光二极管的制造方法及量子点发光显示装置
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摘要
The present invention provides a quantum-dot light emitting diode which solves a charge asymmetry problem in a quantum-dot light emitting diode. The quantum-dot light emitting diode comprises: a first electrode and a second electrode facing each other; a quantum-dot light emitting material layer located between the first and second electrodes and including a quantum-dot; a first charge auxiliary layer located between the first electrode and the quantum-dot light emitting material layer; and a second charge auxiliary layer located between the quantum-dot light emitting material layer and the second electrode. The quantum-dot includes a core, a shell surrounding the core, and a ligand coupled to a part of a surface of the shell. The first charge auxiliary layer is in contact with the ligand. The second charge auxiliary layer is in contact with the shell.
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