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SEMICONDUCTOR DEVICE AND JUNCTION EDGE REGION THEREOF

机译:半导体器件及其结缘区域

摘要

The present application relates to a semiconductor device and a junction edge region thereof; the junction edge region comprises more than one ring unit, the ring units comprise a semiconductor substrate, the semiconductor substrate is provided thereon with a plurality of slots, and each slot bottom is correspondingly provided with a floating region the conductivity type of which is different from that of the semiconductor substrate. The plurality of slots are internally provided with a conductive material, and are isolated from the semiconductor substrate and the floating regions by means of a first insulating medium. The surface of the semiconductor substrate is provided with a second insulating medium which covers, adjoins or is close to the first insulating medium.
机译:本申请涉及一种半导体器件及其结边缘区域。所述接合边缘区域包括一个以上的环单元,所述环单元包括半导体衬底,所述半导体衬底在其上设置有多个狭槽,且每个狭槽底部相应地设置有浮动区域,所述浮动区域的导电类型不同于半导体衬底的厚度。多个缝隙在内部设置有导电材料,并且借助于第一绝缘介质与半导体衬底和浮置区域隔离。半导体衬底的表面设置有第二绝缘介质,该第二绝缘介质覆盖,邻接或靠近第一绝缘介质。

著录项

  • 公开/公告号WO2020181732A1

    专利类型

  • 公开/公告日2020-09-17

    原文格式PDF

  • 申请/专利权人 NANJING SINNOPOWER TECHNOLOGY CO. LTD.;

    申请/专利号WO2019CN103087

  • 发明设计人 DU WENFANG;

    申请日2019-08-28

  • 分类号H01L29/40;

  • 国家 WO

  • 入库时间 2022-08-21 11:09:32

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