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Procedure for the growth of monocrystals of the beta phase of gallium oxide (beta-Ga2O3) from the melt contained within a metal crucible by controlling the partial pressure of O2
Procedure for the growth of monocrystals of the beta phase of gallium oxide (beta-Ga2O3) from the melt contained within a metal crucible by controlling the partial pressure of O2
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机译：通过控制O2的分压从金属坩埚中的熔融物中生长氧化镓（β-Ga2O3）的β相单晶的过程
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摘要
A method for growing beta phase of gallium oxide (²-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ²-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).
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机译：一种从金属坩埚内的熔体中生长出氧化镓（2-Ga 2 O 3）单晶的β相的方法，该金属坩埚被绝热材料包围并被加热器加热。提供给生长炉的生长气氛具有可变的氧气浓度或分压，使得氧气浓度达到浓度范围（SC）在5-100之间的生长氧气浓度值（C2，C2'，C2“）低于Ga 2 O 3的熔融温度（MT）或熔融温度（MT）或在Ga 2 O 3原料完全熔融后的体积％，适用于最大程度地减少金属镓的生成并因此与金属形成共晶在生长温度（GT）下由熔体形成的²-Ga2 O 3单晶的晶体生长步骤中，生长氧浓度值（C2，C2'，C2“）保持在氧浓度范围（SC）中）。
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