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ALGAN/GAN HETEROJUNCTION HEMT DEVICE COMPATIBLE WITH SI-CMOS PROCESS AND MANUFACTURING METHOD THEREFOR
ALGAN/GAN HETEROJUNCTION HEMT DEVICE COMPATIBLE WITH SI-CMOS PROCESS AND MANUFACTURING METHOD THEREFOR
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机译：兼容SI-CMOS工艺的Algan / GAN异质结HEMT器件及其制造方法
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摘要
Disclosed are an AlGaN/GaN heterojunction HEMT device compatible with a Si-CMOS process and a manufacturing method therefor. The device comprises: an AlGaN/GaN heterojunction epitaxial layer, a passivation layer, a gate dielectric layer, a gold-free gate electrode and gold-free source and drain electrodes. The AlGaN/GaN heterojunction epitaxial layer comprises a substrate, a nitride nucleating layer, a nitride buffer layer, a GaN channel layer, an AlGaN intrinsic barrier layer and an AlGaN heavily-doped layer from bottom to top in sequence; the AlGaN heavily-doped layer generates charges by an ionized donor so as to compensate for a surface acceptor level of a semiconductor, thus suppressing a current collapse; and ohmic contact with an electrode is formed by low-temperature annealing; and the gold-free electrode prevents Au from polluting a Si-CMOS process line.
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