首页> 外国专利> METHOD AND SYSTEM FOR ADAPTING SOLID STATE MEMORY WRITE PARAMETERS TO SATISFY PERFORMANCE GOALS BASED ON DEGREE OF READ ERRORS.

METHOD AND SYSTEM FOR ADAPTING SOLID STATE MEMORY WRITE PARAMETERS TO SATISFY PERFORMANCE GOALS BASED ON DEGREE OF READ ERRORS.

机译:基于读取错误程度使固态存储器写参数适应性能目标的方法和系统。

摘要

In general, embodiments of the technology relate to a method for adjusting solid state memory write parameters. The method includes obtaining a performance goal for the solid state memory, receiving a client write request for data from a client, where the client write request comprises a logical address and data to be written. The method further includes determining a physical address corresponding to the logical address, where the physical address comprises a page number for a physical page in the persistent storage, obtaining at least one verify threshold value using the performance goal, issuing a control module program request including the data to be written and the at least one verify threshold value to a storage module, where the storage module comprises the physical page, and programming the data into the physical page of the storage module using the at least one verify threshold value.
机译:通常,本技术的实施例涉及一种用于调整固态存储器写参数的方法。该方法包括获得固态存储器的性能目标,从客户端接收对数据的客户端写请求,其中客户端写请求包括逻辑地址和要写的数据。该方法还包括确定与逻辑地址相对应的物理地址,其中该物理地址包括用于持久性存储器中的物理页面的页面号;使用性能目标获得至少一个验证阈值;发出控制模块程序请求,包括将待写入的数据和至少一个验证阈值存储到存储模块中,其中,存储模块包括物理页面,并使用至少一个验证阈值将数据编程到存储模块的物理页面中。

著录项

  • 公开/公告号US2019348125A1

    专利类型

  • 公开/公告日2019-11-14

    原文格式PDF

  • 申请/专利权人 EMC IP HOLDING COMPANY LLC;

    申请/专利号US201916520263

  • 申请日2019-07-23

  • 分类号G11C16/10;G11C29/52;G11C16/26;G11C16/34;G11C11/56;

  • 国家 US

  • 入库时间 2022-08-21 11:22:04

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