首页> 外国专利> METHOD FOR PRODUCING GROUP III-V SEMICONDUCTOR NANOPARTICLE, METHOD FOR PRODUCING GROUP III-V SEMICONDUCTOR QUANTUM DOT, AND FLOW REACTION SYSTEM

METHOD FOR PRODUCING GROUP III-V SEMICONDUCTOR NANOPARTICLE, METHOD FOR PRODUCING GROUP III-V SEMICONDUCTOR QUANTUM DOT, AND FLOW REACTION SYSTEM

机译:III-V族半导体纳米粒子的制造方法,III-V族半导体量子点的制造方法以及流动反应系统

摘要

A method for producing a Group III-V semiconductor nanoparticle by flow reaction, including: introducing a solution of compound containing Group III element into a first flow channel, introducing a solution of compound containing Group V element into a second flow channel, and combining the solutions to produce nanoparticles, in which the combining portion is constituted by a multi-layered tubular mixer, one of the solutions is allowed to flow through a flow channel in the smallest tube of the mixer, and the other of the solutions is allowed to flow through a flow channel adjacent to the flow channel in the smallest tube, and a value of a ratio of linear velocity of the solution flowing in the flow channel adjacent to the flow channel in the smallest tube to linear velocity of the solution flowing in the flow channel in the smallest tube is a specific value.
机译:一种通过流动反应生产III-V族半导体纳米粒子的方法,包括:将包含III族元素的化合物的溶液引入第一流道;将包含V族元素的化合物的溶液引入第二流道;以及制备纳米颗粒的溶液,其中结合部分由多层管状混合器组成,使一种溶液流过混合器最小管中的流道,使另一种溶液流过通过与最小管中的流动通道相邻的流动通道,以及在与最小管中的流动通道相邻的流动通道中流动的溶液的线速度与在流动中流动的溶液的线速度之比的值最小管中的通道是特定值。

著录项

  • 公开/公告号US2020017358A1

    专利类型

  • 公开/公告日2020-01-16

    原文格式PDF

  • 申请/专利权人 FUJIFILM CORPORATION;

    申请/专利号US201916583260

  • 发明设计人 HIDEKI MATSUMOTO;KENJI WADA;

    申请日2019-09-26

  • 分类号B82B3;C01B25/08;H01L21/02;H01L29/06;G01N33/58;

  • 国家 US

  • 入库时间 2022-08-21 11:23:49

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