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STRUCTURE AND METHOD TO EXPOSE MEMORY CELLS WITH DIFFERENT SIZES
STRUCTURE AND METHOD TO EXPOSE MEMORY CELLS WITH DIFFERENT SIZES
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机译：暴露不同大小记忆细胞的结构和方法
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摘要
A memory cell with an etch stop layer is provided. The memory cell comprises a bottom electrode disposed over a substrate. A switching dielectric is disposed over the bottom electrode and having a variable resistance. A top electrode is disposed over the switching dielectric. A sidewall spacer layer extends along sidewalls of the bottom electrode, the switching dielectric, and the top electrode and an upper surface of a lower dielectric layer. A lower etch stop layer is disposed over the lower dielectric layer and lining an outer sidewall of the sidewall spacer layer. The the sidewall spacer layer separates the lower etch stop layer from the lower dielectric layer.
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