ADAPTING FLASH MEMORY PROGRAMMING PARAMETERS FOR HIGH ENDURANCE AND STEADY PERFORMANCE

• 1. 嵌入式闪存高速编程的实现方法、嵌入式闪存的编程系统 [P] . 中国专利： CN112802527B . 2021.07.02
• 2. 嵌入式闪存高速编程的实现方法、嵌入式闪存的编程系统 [P] . 中国专利： CN112802527A . 2021-05-14
• 3. Adapting flash memory programming parameters for high endurance and steady performance [P] . 美国专利： US10643730B1 . 2020-05-05

  机译： 调整闪存编程参数以实现高耐久性和稳定的性能

• 4. Method and apparatus for adaptive programming of flash memory, flash memory devices, and systems including flash memory having adaptive programming capability [P] . 美国专利： US2008056035A1 . 2008-03-06

  机译： 用于闪存的自适应编程的方法和装置，闪存设备以及包括具有自适应编程能力的闪存的系统

• 5. Methods for adaptively programming flash memory devices and flash memory systems incorporating same [P] . 美国专利： US8799563B2 . 2014-08-05

  机译： 自适应编程闪存设备的方法和包含该方法的闪存系统

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