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Low power VLSI designs using circuit failure in sequential cells as low voltage check for limit of operation

机译:低功耗VLSI设计使用顺序单元中的电路故障作为低电压检查以限制操作

摘要

Low power very large scale integrated (VLSI) designs using a circuit failure in sequential cells as low voltage check for limit of operation of a design are provided. One such method involves the adding a plurality of bits for sequential elements in the design including sets of flip-flops, RAMs, ROMs and register files to add parity or single error correct and double error detect mechanism, a method to detect the parity errors or a single bit error and a double bit error in the sequential elements, starting at a voltage of operation at a nominal value and gradually lowering voltage setting till a first error is detected in the sequential elements, increasing the voltage of operation by predetermined step above a voltage of first fail to achieve an optimal voltage setting of a correct operation of the design, storing this optimal voltage setting in anon-volatile memory for a subsequent use.
机译:提供了在顺序单元中使用电路故障的低功耗超大规模集成(VLSI)设计,作为对设计操作限制的低电压检查。一种这样的方法涉及为设计中的顺序元素添加多个位,包括触发器,RAM,ROM和寄存器文件的集合,以添加奇偶校验或单错误校正和双错误检测机制;一种检测奇偶校验错误或在顺序元件中出现单个位错误和一个双位错误,从标称值的工作电压开始,逐渐降低电压设置,直到在顺序元素中检测到第一个错误为止,以预定的步长将工作电压提高到a以上最初的电压不能实现设计正确操作的最佳电压设置,无法将此最佳电压设置存储在非挥发性存储器中以备后用。

著录项

  • 公开/公告号US10522237B2

    专利类型

  • 公开/公告日2019-12-31

    原文格式PDF

  • 申请/专利权人 AUSTEMPER DESIGN SYSTEMS INC.;

    申请/专利号US201615288912

  • 发明设计人 SANJAY PILLAY;

    申请日2016-10-07

  • 分类号G06F17/50;H03K19/21;H03K19;G11C29/12;G11C29/54;G11C29/52;G11C11/412;

  • 国家 US

  • 入库时间 2022-08-21 11:26:40

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