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Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth
Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth
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机译:沉积掺杂非晶硅膜的方法,具有增强的缺陷控制能力,降低了基材对膜内缺陷的敏感性,并且无气泡生长
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摘要
Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon (a-Si) layers on a semiconductor substrate. In one implementation, a method is provided. The method comprises generating a pressure within a processing volume between 2 Torr and 60 Torr. The method further comprises heating a substrate in the processing volume to a temperature between 300 degrees Celsius and 550 degrees Celsius. The method further comprises flowing a silane-containing gas mixture into the processing volume having the substrate positioned therein. The method further comprises flowing a borane-containing gas mixture into the processing volume having the substrate positioned therein and depositing a boron-doped amorphous silicon layer on the substrate.
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