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Method of depositing doped amorphous silicon films with enhanced defect control, reduced substrate sensitivity to in-film defects and bubble-free film growth

机译:沉积掺杂非晶硅膜的方法,具有增强的缺陷控制能力,降低了基材对膜内缺陷的敏感性,并且无气泡生长

摘要

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon (a-Si) layers on a semiconductor substrate. In one implementation, a method is provided. The method comprises generating a pressure within a processing volume between 2 Torr and 60 Torr. The method further comprises heating a substrate in the processing volume to a temperature between 300 degrees Celsius and 550 degrees Celsius. The method further comprises flowing a silane-containing gas mixture into the processing volume having the substrate positioned therein. The method further comprises flowing a borane-containing gas mixture into the processing volume having the substrate positioned therein and depositing a boron-doped amorphous silicon layer on the substrate.
机译:本文描述的实施方式总体上涉及集成电路的制造,并且特别地涉及在半导体衬底上的硼掺杂非晶硅(a-Si)层的沉积。在一个实现中,提供了一种方法。该方法包括在2托和60托之间的处理体积内产生压力。该方法还包括将处理空间中的基板加热到300摄氏度到550摄氏度之间的温度。该方法还包括使含硅烷的气体混合物流入具有放置在其中的基板的处理空间中。该方法进一步包括使含硼烷的气体混合物流入具有放置在其中的基板的处理空间中,并在基板上沉积掺杂硼的非晶硅层。

著录项

  • 公开/公告号US10593543B2

    专利类型

  • 公开/公告日2020-03-17

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC.;

    申请/专利号US201815976945

  • 发明设计人 MILIND GADRE;PRAKET P. JHA;DEENESH PADHI;

    申请日2018-05-11

  • 分类号H01L21;H01L21/02;C23C16/24;C23C16/46;C23C16/509;

  • 国家 US

  • 入库时间 2022-08-21 11:30:29

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