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SPIN CURRENT MAGNETIZATION ROTATION TYPE MAGNETIC ELEMENT, SPIN CURRENT MAGNETIZATION ROTATION TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
SPIN CURRENT MAGNETIZATION ROTATION TYPE MAGNETIC ELEMENT, SPIN CURRENT MAGNETIZATION ROTATION TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
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机译：自旋磁化旋转型磁元件，自旋磁化旋转型磁阻效应元件和磁存储器
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摘要
To provide a spin current magnetization rotation type magnetic element enabling magnetization rotation without the application of an external magnetic field, and as a result, can achieve power saving and the improved degree of integration.SOLUTION: The spin current magnetization rotation type magnetic element includes: a spin orbital torque wiring extending to a first direction; a first ferromagnetic layer located in the second direction which intersects with the first direction of the spin orbital torque wiring, and of which magnetization direction changes; and a spin injection layer contacting to an opposite surface opposite to the first ferromagnetic layer side of the spin orbital torque wiring side, and laminated in the second direction. The magnetization direction of the first ferromagnetic layer is the Z-direction along the second direction and the magnetization direction of the spin injecting layer has the X-direction along the first direction. Alternatively, the magnetization direction of the first ferromagnetic layer is the X-direction along the first direction, and the magnetization direction of the spin injecting layer is the Z-direction along the second direction.SELECTED DRAWING: Figure 1
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