首页> 外国专利> Ligand-modified quantum dot compositions, ligand-modified quantum dot layers and their fabrication methods, quantum dot light emitting diodes

Ligand-modified quantum dot compositions, ligand-modified quantum dot layers and their fabrication methods, quantum dot light emitting diodes

机译:配体修饰的量子点组合物,配体修饰的量子点层及其制造方法,量子点发光二极管

摘要

The present disclosure provides a ligand-modified quantum dot composition, a ligand-modified quantum dot layer and a method for producing the same, and a quantum dot light emitting diode. In the ligand-modified quantum dot composition, segment B of the ligand modifier is a strand-breakable segment, that is, segment B is a long molecular chain, so that the material has good solubility and stability. The ligand-modified quantum dot composition exists in the form of a solution or ink. Segment B itself is not very stable and can be dechained under certain conditions. In certain applications, the groups in segment B are cleaved by heating or irradiation with light, resulting in the ligand modifier being a short molecular chain ligand, which densely fills the quantum dots and improves carrier transmission performance. It will be improved.
机译:本公开提供了配体改性的量子点组合物,配体改性的量子点层及其制造方法以及量子点发光二极管。在配体改性的量子点组合物中,配体改性剂的链段B是可断裂链的链段,即链段B是长分子链,因此该材料具有良好的溶解性和稳定性。配体改性的量子点组合物以溶液或墨水的形式存在。 B段本身不是很稳定,可以在某些条件下脱链。在某些应用中,片段B中的基团通过加热或用光照射而裂解,从而导致配体改性剂为短分子链配体,其密集地填充了量子点并改善了载流子传输性能。它将得到改善。

著录项

  • 公开/公告号JP2020526596A

    专利类型

  • 公开/公告日2020-08-31

    原文格式PDF

  • 申请/专利号JP20180565061

  • 发明设计人 ▲張▼ 振▲キ▼;

    申请日2018-03-16

  • 分类号C09K11/08;C09K11/88;C09K11/56;C09K11/70;C09K11/66;C09K11/62;C09K11/54;C09K11/61;C09K11/74;C09K11/65;H01L33/04;H01L33/26;B82Y20;B82Y40;H05B33/14;H05B33/10;

  • 国家 JP

  • 入库时间 2022-08-21 11:36:04

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