首页> 外国专利> RESISTOR MATERIAL, SPUTTERING TARGET FOR FORMING RESISTANCE THIN FILM, RESISTANCE THIN FILM AND THIN FILM RESISTOR, AND MANUFACTURING METHOD OF SPUTTERING TARGET FOR FORMING RESISTANCE THIN FILM AND MANUFACTURING METHOD OF RESISTANCE THIN FILM

RESISTOR MATERIAL, SPUTTERING TARGET FOR FORMING RESISTANCE THIN FILM, RESISTANCE THIN FILM AND THIN FILM RESISTOR, AND MANUFACTURING METHOD OF SPUTTERING TARGET FOR FORMING RESISTANCE THIN FILM AND MANUFACTURING METHOD OF RESISTANCE THIN FILM

机译：电阻材料，形成电阻薄膜的溅射靶材，电阻薄膜和薄膜电阻器以及形成电阻薄膜的溅射靶材的制造方法和电阻薄膜的制造方法

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摘要

To provide a resistance thin film excellent in both resistivity and high-temperature stability even when the resistance thin film undergoes heat treatment at a relatively low temperature, and to provide a thin film resistor comprising the resistance thin film, a resistor material for manufacturing the resistance thin film, a sputtering target for forming the resistance thin film, a manufacturing method of the sputtering target for forming the resistance thin film and a manufacturing method of the resistance thin film.SOLUTION: The resistor material is composed of a sintered compact of a powdery mixture containing 3 to 20 mass% of glass powder composed of a pure SiOwith an average particle size of 30 μm or more and 200 μm or less in a Ni alloy powder containing 10 to 60 mass% of one or more types of an additive element selected from among Cr, Al, and Y and a balance composed of Ni and an inevitable impurity.SELECTED DRAWING: Figure 2

机译：即使在电阻薄膜在相对较低的温度下进行热处理时，也提供电阻率和高温稳定性均优异的电阻薄膜，并且提供包括该电阻薄膜的薄膜电阻器，用于制造该电阻器的电阻器材料。薄膜，用于形成电阻薄膜的溅射靶材，用于形成电阻薄膜的溅射靶材的制造方法以及电阻薄膜的制造方法。解决方案：电阻器材料由粉末状的烧结体构成。含有3至20质量％的玻璃粉的混合物，该玻璃粉由平均粒径在30μm以上且200μm以下的纯SiO组成，在含有10至60质量％的一种或多种类型的添加元素的Ni合金粉末中从Cr，Al和Y中选择，其余部分由Ni和不可避免的杂质组成。

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公开/公告号JP2020007601A

专利类型
公开/公告日2020-01-16

原文格式PDF
申请/专利权人 SUMITOMO METAL MINING CO LTD;
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申请/专利号JP20180128625
发明设计人 YAMAGISHI KOICHI;WATANABE HIROYUKI;
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申请日2018-07-05
分类号C23C14/34;H01C17/12;H01C7;H01B5/16;H01B1/02;H01B5/14;H01B13;
国家 JP
入库时间 2022-08-21 11:37:00

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