首页> 外国专利> One dimensional transition metal chalcogenide compound interconnect composed by one dimensional transition metal chalcogenide compound electronic apparatus having the same

One dimensional transition metal chalcogenide compound interconnect composed by one dimensional transition metal chalcogenide compound electronic apparatus having the same

机译:一维过渡金属硫属化物化合物互连体,由具有该结构的一维过渡金属硫属化物化合物电子设备构成

摘要

The present invention provides a one-dimensional transition metal chalcogen compound capable of forming wiring for an electronic device that overcomes the limitations of increased resistance and reduced current flow as the size decreases. The one-dimensional transition metal chalcogen compound according to the embodiment of the present invention includes a transition metal and chalcogen and has an anisotropic one-dimensional structure extending along one axis.
机译:本发明提供了一种能够形成用于电子设备的布线的一维过渡金属硫族元素化合物,该化合物克服了随着尺寸减小电阻增大和电流减小的限制。根据本发明实施方式的一维过渡金属硫属元素化合物包括过渡金属和硫属元素,并且具有沿一轴延伸的各向异性一维结构。

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