首页> 外国专利> SiC Manufacturing method of low-temperature heating element using SiC powder synthesized with metal silicon

SiC Manufacturing method of low-temperature heating element using SiC powder synthesized with metal silicon

机译:用金属硅合成的SiC粉末制造低温加热元件的SiC的方法

摘要

The present invention relates to a method for manufacturing a low-temperature heating element using SiC powder synthesized with metal silicon. The provided method for manufacturing a low-temperature heating element comprises: a first step of manufacturing silicon carbide; a second step of milling the manufactured silicon carbide and metal silicon to form a mixture; a third step of drying the milled mixture and sieving the mixture to obtain powder; a fourth step of shaping the sieved powder to form a formed body; and a fifth step of sintering the formed body. According to the present invention, a low-temperature heating element excellent in electrical resistivity characteristics and the like is provided using metal silicon and SiC powder.
机译:本发明涉及一种使用与金属硅合成的SiC粉末制造低温加热元件的方法。提供的用于制造低温加热元件的方法包括:制造碳化硅的第一步;第二步是将制得的碳化硅和金属硅研磨形成混合物。第三步,将研磨后的混合物干燥并过筛以得到粉末。第四步骤是将筛分的粉末成形以形成成形体。第五步,烧结成形体。根据本发明,使用金属硅和SiC粉末来提供电阻率特性等优异的低温加热元件。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号