首页> 外国专利> DC/DC GATE DRIVER MODULE HALF BRIDGE DC/DC CONVERTER AND DISTRIBUTED POWER OPTIMIZER USING THE SAME

DC/DC GATE DRIVER MODULE HALF BRIDGE DC/DC CONVERTER AND DISTRIBUTED POWER OPTIMIZER USING THE SAME

机译:DC / DC栅极驱动器模块半桥DC / DC转换器和使用相同模块的分布式电源优化器

摘要

The present invention relates to a gate driver module (GD module) for driving a high-side switch and a low-side switch of a half-bridge DC/DC converter used in a distributed power optimizer for maximum power point tracking for a photovoltaic system. The GD module comprises: a GD module substrate capable of attaching circuit elements or changing circuit or element specifications on a user, producer, or application developer level; a high-side gate driver (HSGD) including at least the circuit elements detachably mounted on the GD module substrate, and formed on the GD module substrate to drive a high-side switch; and a low-side gate driver (LSGD) including at least the circuit elements detachably mounted on the GD module substrate, and formed on the GD module substrate to drive a low-side switch. The present invention also relates to a half-bridge DC/DC converter and a distributed power optimizer using a GD module. Thus, the gate driver can be changed, repaired, and advancedly developed without time delay on a user or developer level, and can prevent the operation of the distributed power optimizer using the gate driver from being stopped, or the development thereof from being delayed.
机译:栅极驱动器模块(GD Module)技术领域本发明涉及一种栅极驱动器模块(GD Module),该栅极驱动器模块用于驱动在分布式功率优化器中使用的半桥DC / DC转换器的高侧开关和低侧开关,以跟踪光伏系统的最大功率点。 。 GD模块包括:GD模块基板,其能够在用户,生产者或应用开发者级别上附着电路元件或改变电路或元件规格;以及高侧栅极驱动器(HSGD),其至少包括可拆卸地安装在GD模块基板上并形成在GD模块基板上以驱动高侧开关的电路元件;低侧栅极驱动器(LSGD)至少包括可拆卸地安装在GD模块基板上并形成在GD模块基板上以驱动低侧开关的电路元件。本发明还涉及使用GD模块的半桥DC / DC转换器和分布式功率优化器。因此,可以在用户或开发人员级别上无时间延迟地改变,维修和先进地开发栅极驱动器,并且可以防止停止使用栅极驱动器的分布式功率优化器的操作或延迟其开发。

著录项

  • 公开/公告号KR20190124864A

    专利类型

  • 公开/公告日2019-11-06

    原文格式PDF

  • 申请/专利权人 FIRST SILICON CO. LTD.;

    申请/专利号KR20180048852

  • 发明设计人 KIM SI HONG;

    申请日2018-04-27

  • 分类号H03K17/689;G05F1/67;H02M1/08;H02M3/158;

  • 国家 KR

  • 入库时间 2022-08-21 11:49:28

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号