METHOD FOR MANUFACTURING A CRYSTALLINE LAYER OF PZT MATERIAL, AND SUBSTRATE FOR EPITAXIALLY GROWING A CRYSTALLINE LAYER OF PZT MATERIAL

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• 2. 复层材料，用于制造所述复层材料的方法以及用于制造所述复层材料的装置 [P] . 中国专利： CN1933928A . 2007-03-21
• 3. METHOD FOR MANUFACTURING A CRYSTALLINE LAYER OF PZT MATERIAL, AND SUBSTRATE FOR EPITAXIAL GROWING A CYRSTALLINE LAYER OF PZT MATERIAL [P] . US2021074906A1 . 2021-03-11

  机译： 用于制造PZT材料的结晶层的方法，以及用于外延生长的PZT材料的外延底物

• 4. Method for manufacturing crystalline layer of PZT material and substrate for epitaxial growth of crystalline layer of PZT material [P] . JP2021518321A . 2021-08-02

  机译： PZT材料晶体层的制造晶体层的制造方法，用于晶体层外结晶层的外延生长

• 5. PATTERNED SUBSTRATE FOR EPITAXIAL GROWING A SEMICONDUCTOR MATERIAL CAPABLE OF IMPROVING CRYSTALLINE QUALITY OF AN EPITAXIAL LAYER STRUCTURE AND A METHOD FOR PATTERNING A SUBSTRATE [P] . 韩国专利： KR20120055467A . 2012-05-31

  机译： 外延生长的可修补基质材料，可改善外延层结构的晶体质量，以及用于修补基质的方法

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