首页>
外国专利>
N-TYPE ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM-FORMING COMPOSITION, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME, ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR PRODUCING SAME, AND COMPOUND PRODUCTION METHOD
N-TYPE ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM-FORMING COMPOSITION, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME, ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR PRODUCING SAME, AND COMPOUND PRODUCTION METHOD
Provided are an n-type organic semiconductor material that has better properties and in particular that when used for a transistor exhibits an excellent carrier mobility and a good atmospheric operational stability; an organic semiconductor film-forming composition containing the same; and an organic semiconductor film and an organic thin-film transistor containing the same. The n-type organic semiconductor material is represented by formula (I).(In formula (I), A1 and A2 each independently represent -O-, -N(RN)- or -P(RN)-. B1 to B4 each independently represent -N= or -C(RM)=, provided that at least one is -N=. RN and RM each independently represent a hydrogen atom or a substituent. X1 to X4 each independently represent an oxygen atom or a sulfur atom.)
展开▼
机译：本发明提供了一种n型有机半导体材料，其具有更好的性能，特别是当用于晶体管时表现出优异的载流子迁移率和良好的大气操作稳定性;包含其的有机半导体成膜组合物;有机半导体膜和含有该有机半导体膜的有机薄膜晶体管。 n型有机半导体材料由式（I）表示。（在式（I）中，A 1 和A 2 分别独立代表-O-，-N（R N ）-或-P （R N ）-。B 1 到B 4 分别独立表示-N =或-C（R M ）=，条件是至少一个为-N =。R N 和R M 各自独立地表示氢原子或取代基。X 1 至X 4 各自独立地表示一个氧原子或一个硫原子。）
展开▼
