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PULSED DC SOURCE FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING PHYSICAL VAPOR DEPOSITION OF DIELECTRIC FILMS AND METHODS OF APPLICATION

机译：大功率脉冲磁控溅射物理气相沉积介电薄膜的脉冲直流源及其应用方法

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摘要

An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

机译：使用物理气相沉积工艺形成电介质膜层的设备和方法包括将溅射气体输送到位于处理室的处理区域中的衬底，该处理室具有含电介质的溅射靶，将能量脉冲输送至溅射气体以产生溅射等离子体，该溅射等离子体由能量脉冲形成，该能量脉冲在小于50 kHz的频率上具有约800伏至约2000伏的平均电压和约50安培至约300安培的平均电流大于5kHz并且将溅射等离子体引导至含电介质的溅射靶，以形成包含从含电介质的溅射靶溅射的电介质材料的电离物质，该电离物质在基板上形成含电介质的膜。

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公开/公告号WO2019089190A1

专利类型
公开/公告日2019-05-09

原文格式PDF
申请/专利权人 APPLIED MATERIALS INC.;
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申请/专利号WO2018US54918
发明设计人 BABAYAN VIACHSLAV;ALLEN ADOLPH MILLER;CITLA BHARGAV;DEDORE RONALD D.;FAUNE VANESSA;HUA ZHONG QIANG;SONI VAIBHAV;WU MENGLU;
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申请日2018-10-09
分类号H01L21/02;H05H1/46;H01L21/67;C23C16/455;H01L21/28;
国家 WO
入库时间 2022-08-21 11:54:52

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