首页> 外国专利> An ultra-wide operating temperature dielectric material obtained in La(Zn0.5Ti0.5)O3- K0.5Na0.5NbO3 solid solutions

An ultra-wide operating temperature dielectric material obtained in La(Zn0.5Ti0.5)O3- K0.5Na0.5NbO3 solid solutions

机译:在La(Zn0.5Ti0.5)O3- K0.5Na0.5NbO3固溶体中获得的超宽工作温度介电材料

摘要

#$%^&*AU2019100447A420190606.pdf#####Abstract Ceramic-based dielectrics are considered as the best candidates for high temperature capacitors because of their outstanding mechanical and electrical properties. Nevertheless, conventional barium titanate-based capacitors show narrow operating temperature ranges owing to the lower tetragonal-cubic phase transition temperature. In order to significantly increase the working temperature and relative permittivity, a novel (1-x)Nao.5Ko.5NbO3-xLa(Zno.Tio.5)3 (NKN-xLZT) ceramics were chosen to meet the targets in this work. The NKN-xLZT ceramics with sub-micrometer grains (0.2-0.4 pm) were synthesized via a conventional solid-state sintering route. A relative permittivity (e'= 1560 15%) with low loss tangent over wide temperature range from 96 °C to 350 °C was obtained in the x = 0.02 ceramics. Additionally, the crystal structure distortion and conduction behaviors of the NKN-xLZT ceramics were systematically studied. The decrease of oxygen octahedron distortion induced a weak electric dipole moment, and the high resistance (9x106 Qcm at 400 °C) greatly suppressed the long-term migration of defective ions in the ceramics. Therefore, the lower loss tangent and high dielectric permittivity still maintained at the high temperature. It believes that the NKN-xLZT ceramic system in this work will become one of the most promising candidates for high-temperature capacitor devices. 1
机译:#$%^&* AU2019100447A420190606.pdf #####抽象陶瓷基电介质被认为是高温的最佳选择电容器由于其出色的机械和电气性能。然而,传统的钛酸钡基电容器显示出狭窄的工作范围由于较低的四方立方相变温度,所以温度范围较大。为了显着提高工作温度和相对介电常数,选择新型(1-x)Nao.5Ko.5NbO3-xLa(Zno.Tio.5)3(NKN-xLZT)陶瓷达到这项工作的目标。具有亚微米级晶粒的NKN-xLZT陶瓷通过常规的固态烧结路线合成(0.2-0.4pm)。一种相对介电常数(e'= 1560 15%),在宽温度范围内具有低损耗正切x = 0.02陶瓷的温度范围为96°C至350°C。此外,NKN-xLZT陶瓷的晶体结构畸变和导电行为分别为系统地研究。氧八面体畸变的减少引起弱电偶极矩和高电阻(400°C时为9x106 Qcm)抑制了缺陷离子在陶瓷中的长期迁移。因此,损耗角正切低,介电常数高温度。相信这项工作中的NKN-xLZT陶瓷系统将成为高温电容器器件最有希望的候选者之一。1个

著录项

  • 公开/公告号AU2019100447A4

    专利类型

  • 公开/公告日2019-06-06

    原文格式PDF

  • 申请/专利权人 NANCHANG HANGKONG UNIVERSITY;

    申请/专利号AU20190100447

  • 发明设计人 LIU ZHIYONG;ZHANG AN;GENG XINHUI;

    申请日2019-04-28

  • 分类号C04B35/46;C04B35/495;

  • 国家 AU

  • 入库时间 2022-08-21 11:55:28

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