首页> 外国专利> WHITE LIGHT LED PACKAGE STRUCTURE AND WHITE LIGHT SOURCE SYSTEM

WHITE LIGHT LED PACKAGE STRUCTURE AND WHITE LIGHT SOURCE SYSTEM

机译:白光LED封装结构和白光源系统

摘要

Disclosed are a white light LED package structure and a white light source system. The structure comprises: a substrate (100), an LED chip (200) and a wavelength conversion material layer (300), wherein the luminescence peak wavelength of the LED chip is between 400 nm and 425 nm; the luminescence peak wavelength of the wavelength conversion material layer is between 440 nm and 700 nm; and the wavelength conversion material layer absorbs light emitted by the LED chip and emits a white light source. Where P(λ) is the luminescence spectrum of the white light source, S(λ) is the luminescence spectrum of a blackbody radiation having the same colour temperature as the white light source, P(λmax) is the maximum light intensity in 380-780 nm, S(λmax) is the maximum light intensity of the blackbody radiation in 380-780 nm, and D(λ) is a difference value between the spectrum of a white light LED and the spectrum of the blackbody radiation in 510-610 nm, the white light source meets the following condition: D(λ) = P(λ)/P(λmax) - S(λ)/S(λmax), -0.15 D(λ) 0.15.
机译:公开了一种白光LED封装结构和白光源系统。该结构包括:基板(100),LED芯片(200)和波长转换材料层(300),其中,LED芯片的发光峰值波长在400nm至425nm之间;以及波长转换材料层的发光峰值波长在440nm至700nm之间。波长转换材料层吸收LED芯片发射的光并发射白光源。其中P(λ)是白光源的发光光谱,S(λ)是与白光源具有相同色温的黑体辐射的发光光谱,P(λmax)是380- 780 nm,S(λmax)是380-780 nm处黑体辐射的最大光强度,D(λ)是白光LED的光谱与510-610中黑体辐射的光谱之间的差值nm,白光源满足以下条件:D(λ)= P(λ)/ P(λmax)-S(λ)/ S(λmax),-0.15

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号