首页> 外国专利> PRECURSOR STRUCTURE OF PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME, PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION FILM USING THOSE AND METHOD FOR MANUFACTURING SAME, AND PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION ELEMENT USING THOSE

PRECURSOR STRUCTURE OF PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME, PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION FILM USING THOSE AND METHOD FOR MANUFACTURING SAME, AND PERPENDICULAR MAGNETIZATION-TYPE TUNNEL MAGNETORESISTANCE JUNCTION ELEMENT USING THOSE

机译：垂直磁化膜的先驱结构，垂直磁化膜结构和制造相同方法的方法，垂直磁化型隧道磁阻薄膜使用这种方法和制造方法，利用这种方法的连续性

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摘要

By utilizing, as a basic configuration, a combination between MgAl₂O₄ and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic anisotropy. The perpendicular magnetization film structure (101) according to one embodiment of the present invention is characterized by being provided with: a substrate (2) having an alignment film of a cubic single crystal having the (001) plane or of a cubic or tetragonal system grown through the (001) plane; a foundation layer (3) which is located on the substrate and which is formed of a good conductor; a perpendicular magnetization layer (7) which is located on the foundation layer and which is formed of a product layer of an iron-based alloy containing aluminum as a composition material; and a non-magnetic layer (6) which is disposed on the perpendicular magnetization layer and which is an oxide having a spinel structure or a structure where the cation site in a spinel structure is disordered, and which has grown through the (001) plane.

机译：通过将MgAl _{2 O _{4 和以Fe为主要成分的合金的组合作为基本结构，本发明提供了一种高磁化率的垂直磁化膜结构。界面感应的磁各向异性。根据本发明的一个实施方式的垂直磁化膜结构（101）的特征在于，提供：具有具有（001）面的立方单晶或立方或四方晶系的取向膜的基板（2）。通过（001）平面生长;基础层（3），其位于基底上并且由良导体形成;垂直磁化层（7），其位于基础层上，并且由包含铝作为组成材料的铁基合金的产品层形成;非磁性层（6），其设置在垂直磁化层上并且是具有尖晶石结构或尖晶石结构中的阳离子位点无序的结构的氧化物，并且已经穿过（001）面生长。}}

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公开/公告号WO2019049740A1

专利类型
公开/公告日2019-03-14

原文格式PDF
申请/专利权人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE;
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申请/专利号WO2018JP31877
发明设计人 SUKEGAWA HIROAKI;SCHEIKE THOMAS;MITANI SEIJI;
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申请日2018-08-29
分类号H01L43/10;G01R33/09;H01F10/14;H01F10/30;H01L21/8239;H01L27/105;H01L43/08;H01L43/12;
国家 WO
入库时间 2022-08-21 11:55:59

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