首页> 外国专利> IMPROVING DEFECT LOCATION ACCURACY USING SHAPE BASED GROUPING GUIDED DEFECT CENTERING

IMPROVING DEFECT LOCATION ACCURACY USING SHAPE BASED GROUPING GUIDED DEFECT CENTERING

机译:使用基于形状的分组引导的缺陷定位提高缺陷定位的准确性

摘要

Defect location accuracy can be increased using shape based grouping with pattern-based defect centering. Design based grouping of defects on a wafer can be performed. A spatial distribution of the defects around at least one structure on the wafer, such as a predicted hot spot, can be determined. At least one design based defect property for a location around the structure can be determined. The defects within an x-direction threshold and a y-direction threshold of the structure may be prioritized.
机译:使用基于形状的分组和基于模式的缺陷居中可以提高缺陷定位的准确性。可以对晶圆上的缺陷进行基于设计的分组。可以确定晶片上至少一种结构周围的缺陷的空间分布,例如预测的热点。可以确定围绕结构的位置的至少一个基于设计的缺陷性质。可以优先考虑结构的x方向阈值和y方向阈值内的缺陷。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号