首页> 外国专利> Method for producing thin film converter of electromagnetic radiation, based on the quasi-zero-dimensional structure and the thin film converter of electromagnetic radiation, based on the quasi-zero-dimensional structure produced by this method

Method for producing thin film converter of electromagnetic radiation, based on the quasi-zero-dimensional structure and the thin film converter of electromagnetic radiation, based on the quasi-zero-dimensional structure produced by this method

机译:基于准零维结构的电磁辐射薄膜转换器的制造方法以及基于该方法产生的准零维结构的电磁辐射的薄膜转换器

摘要

cienkowarstwowy converter of electromagnetic radiation based on the structure quasizerowymiarowej quantum dots.having a layered structure with positive electrode and negative electrode, characterised by the fact that consists of two outer plates of glass (1 and 2) thickness g = 0.5 - 4.0 mm.hardened thermally or chemically reinforced by ions in the brine bath,whose internal surfaces are connected intrinsically transparent conducting layers of metal oxides with beneficial tco (3 and 4) of a thickness of 400 - 600 nmequipped at its opposite ends in a positive electrode and a negative electrode (7), (8),with the conductive layer (3) with its positive electrode (7) is connected in nanoczu0105steczkowa - semiconductor layer with titanium dioxide tio2 (9) of thickness 500 - 2000 nm.and connected firmly by sprayu00f3w layer zerowymiarowych quantum dots structures (10) with a thickness of 50 to 600 nm and diameter of 2 to 12 nm type qds,which is also embedded method sprayu00f3w wysokowydajna coating transport (11) type htl thickness of 200 - 5000 nm, made of durable polymer conducting an electric current.positive type "pedot", on which is placed a negative electrode (8) together with the conductive layer (4), which are connected with the second glass plate (2),lateral wall which are zlaminowane peripherally by laminacyjnej film (12), preferably of type "eva" with both side wall conductive layers (3 and 4).transport layer htl (11) layers of quantum dots qds (10) and tio2 semiconductor layer (9) and the side walls of the first plates (1),creating a monolithic cienkowarstwowy converter of electromagnetic radiation.
机译:基于结构quasizerowymiarowej量子点的cienkowarstwowy电磁辐射转换器,具有带正电极和负电极的分层结构,其特征是由两个玻璃外板(1和2)组成,厚度为g = 0.5-4.0 mm。通过盐水浴中的离子进行热或化学增强,其内表面连接有本质上透明的金属氧化物导电层,其有益tco(3和4)的厚度为400-600 nm,正反两面分别位于正极和负极电极(7),(8),其导电层(3)及其正电极(7)在nanocz -半导体层中连接,该半导体层具有厚度为500-2000 nm的二氧化钛tio2(9),并通过喷涂厚度为50到600 nm且直径为2到12 nm的qds型零层wymiarowych量子点结构(10),也采用嵌入式方法喷涂wysokowydajn厚度为200-5000 nm的涂层传输层(11),厚度为200-5000 nm,由耐久的聚合物制成,导电类型为“ pedot”,其上放置有负极(8)和导电层(4) ,其与第二玻璃板(2)相连,其侧壁通过层状膜(12)在外围为zlaminowane,优选为“ eva”型,具有两个侧壁导电层(3和4)。 11)量子点qds(10)和tio2半导体层(9)的层以及第一板(1)的侧壁,创建了电磁辐射的单片cienkowarstwowy转换器。

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