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Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure
Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure
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机译：用于GaN基高电子迁移率晶体管的外延多层结构和包含该结构的晶体管
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摘要
An epitaxial multilayer semiconductor structure suitable for use in nitride e-HEMT structures having an electron channel layer (3) consisting of an unsupported GaN, over which is a barrier layer adjacent the electron channel (4). According to the invention, the barrier layer is a combination of layers (5.6) of binary AlN and GaN semiconductors. Binary semiconductors and the interfaces between them form an effective barrier especially for the back diffusion of Mg atoms from the GaN backing layer into the electron channel (4). The barrier structure abuts the electron channel (4) in each case by the AlN layer (5), but from above it can be terminated by both the GaN layer (6) and the AlN layer (5). The barrier may comprise a single or more GaN / AlN pairs, may be of greater thickness than conventional AlGaN layer barriers. The epitaxial multilayer semiconductor structure according to the invention is particularly suitable for an electron channel transistor which is closed without applied voltage.
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