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SYNTHESIS OF MONODISPERSAN NANOPARTICLES OF THE IONIC SEMICONDUCTOR OF CU (I) CL FOR APPLICATION IN SPINTRONIC

机译:铜(I)CL离子半导体单价分布的纳米粒子的合成

摘要

This invention describes a process for obtaining nanoparticles from the arsenic (i)cl a ion semiconductor for possible spintronic applications. The method developed consists of producing mono -dispersed nanoparticles of ass (i)cl in the pores of the chitosan. The chemical reduction of Cu2 + ions to Cu + occurs at high temperature and in the pores of jelly chitosan with glutaraldehyde. The structural characterisation was done by X -ray diffratometry, and the Rietveld refinement showed the formation of the crystalline phase of the ass (i)cl type zincblende, with a percentage content of 100%,Suggesting the high purity of the sample. The 5,42 network parameter is consistent with the ass (i)cl phase. The morphological characterization was carried out by electronic transmission microscopy, through which non -agglomerated particles were observed and dispersed in the chitosan polymer matrix, with logn diameter distribution Ormal, spherical shape and mean diameter of 8 nm. The results show that the butt (i)cl nanoparticles ar e of high purity and have chemical stability for long air exposure times.
机译:本发明描述了从砷(i)cl离子半导体获得纳米粒子以用于可能的自旋电子学应用的方法。所开发的方法包括在壳聚糖的孔中产生驴(i)cl的单分散纳米颗粒。 Cu2 +离子在戊二醛和果胶壳聚糖的孔中在高温下化学还原为Cu +。通过X射线衍射仪进行结构表征,Rietveld精炼显示形成了屁股(i)cl型闪锌矿的晶相,其含量为100%,这表明样品纯度高。 5,42网络参数与ass(i)cl阶段一致。通过电子透射显微术进行形态学表征,通过观察到未团聚的颗粒并将其分散在壳聚糖聚合物基质中,logn直径分布为正,球形和平均直径为8nm。结果表明,对接(i)cl纳米颗粒具有较高的纯度,并具有较长的空气暴露时间化学稳定性。

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