首页> 外国专利> MODIFYING A MANUFACTURING PROCESS OF INTEGRATED CIRCUITS BASED ON LARGE SCALE QUALITY PERFORMANCE PREDICTION AND OPTIMIZATION

MODIFYING A MANUFACTURING PROCESS OF INTEGRATED CIRCUITS BASED ON LARGE SCALE QUALITY PERFORMANCE PREDICTION AND OPTIMIZATION

机译:基于大规模质量性能预测和优化的集成电路制造过程的修改

摘要

A computer-implemented method modifies a manufacturing process for integrated circuits. One or more processors receive sensor readings that identify failed integrated circuits from a batch of integrated circuits, where each of the integrated circuits includes a set of dynamic random access memory (DRAM) chips and a memory buffer, where the memory buffer provides an interface between a memory controller and the DRAM chips. The processor(s) identify, based on the sensor readings, a performance trending estimate of DRAM failures versus memory buffer failures in the identified failed integrated circuits. The processor(s) predict a fault analysis (FA) pareto based on the performance trending estimate, a location and address of each DRAM in the identified failed integrated circuits, and a wafer location on the wafer die on which each memory buffer that has the memory buffer failure, such that a manufacturing process for the integrated circuits is modified based on the FA pareto.
机译:计算机实现的方法修改了集成电路的制造过程。一个或多个处理器接收传感器读数,以识别一批集成电路中发生故障的集成电路,其中每个集成电路都包括一组动态随机存取存储器(DRAM)芯片和一个存储器缓冲区,其中存储器缓冲区在存储器控制器和DRAM芯片。处理器基于传感器的读数来识别所识别出的故障集成电路中DRAM故障与内存缓冲区故障的性能趋势估计。处理器根据性能趋势估计,所识别出的故障集成电路中每个DRAM的位置和地址以及晶圆管芯上的晶圆位置来预测故障分析(FA)pareto,每个内存缓冲区具有存储缓冲区故障,从而基于FA pareto修改集成电路的制造过程。

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