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BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE REQUIREMENTS
BURIED CONTACT TO PROVIDE REDUCED VFET FEATURE-TO-FEATURE TOLERANCE REQUIREMENTS
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机译：隐式接触，以提供降低的VFET特性到特性公差要求
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摘要
Embodiments are directed to a semiconductor device. The semiconductor device includes a first semiconductor fin formed opposite a surface of a first active region of a substrate. The semiconductor device further includes a second semiconductor fin formed opposite a surface of a second active region of the substrate. The semiconductor device further includes a self-aligned buried contact formed over portions of the first active region and the second active region and between the first semiconductor fin and the second semiconductor fin.
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