首页> 外国专利> METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER, AND MICROELECTRONIC, PHOTONIC, OR OPTICAL DEVICE INCLUDING SUCH A LAYER

METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER, AND MICROELECTRONIC, PHOTONIC, OR OPTICAL DEVICE INCLUDING SUCH A LAYER

机译：制造单晶压电层的方法以及包括该层的微电子，光子或光学设备

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摘要

A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a “seed layer” from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.

机译：一种制造单晶压电层的方法，其中，该方法包括：提供压电材料的施主衬底;提供接收衬底;从施主衬底到接收衬底上转移称为“种子层”的层;以及实施外延在籽晶层上形成压电材料，直到获得单晶压电层所需的厚度。

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公开/公告号US2019006577A1

专利类型
公开/公告日2019-01-03

原文格式PDF
申请/专利权人 SOITEC;
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申请/专利号US201616064420
发明设计人 IONUT RADU;BRUNO GHYSELEN;JEAN-MARC BETHOUX;
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申请日2016-12-21
分类号H01L41/187;C30B29/22;C30B25/18;H01L41/08;H01L41/09;H01L41/113;H01L41/319;H01L41/335;H03H3/02;H03H3/08;H03H9/02;H03H9/17;H03H9/19;H03H9/54;H03H9/25;H03H9/64;
国家 US
入库时间 2022-08-21 12:06:07

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