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WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME
WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME
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机译：纳米FET的全绕式接触及其形成方法
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摘要
Various aspects of the disclosure include nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, not just on the top and sides of the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects of the disclosure include nanosheet-FET structures having a bottom isolation to reduce parasitic S/D leakage to the substrate.
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