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Photoresistors on silicon-on-insulator substrate and photodetectors incorporating same

机译：绝缘体上硅衬底上的光电电阻器和包含该电阻器的光电检测器

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摘要

A photoresistor comprises a silicon-on-insulator substrate (101) comprising a device layer (4). In an example embodiment and mode at least two non-contiguous first highly conductive regions (2, 3) of semiconductor material are formed on a surface of the device layer, and at least one active region (1) of a high resistivity semiconductor material of a same conductivity type as the first highly conductive regions are formed to propagate through a whole thickness of the device layer and to electrically contact the at least two non-contiguous first highly conductive regions.

机译：光致抗蚀剂包括具有器件层（ 4 ）的绝缘体上硅衬底（ 101 ）。在示例实施例和模式中，在器件层的表面上形成半导体材料的至少两个不连续的第一高导电区域（ 2、3 ），以及至少一个有源区域（ 1 ）的导电类型与第一高导电区域相同的高电阻率半导体材料形成为传播通过整个器件层厚度并与至少两个不连续的第一高导电区域电接触地区。 展开▼

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公开/公告号US10224449B2

专利类型

公开/公告日2019-03-05

原文格式PDF

申请/专利权人 OSI OPTOELECTRONICS INC.;
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申请/专利号US201615174112

发明设计人 ALEXANDER O. GOUSHCHA;
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申请日2016-06-06

分类号H01L31/09;H01L31/0203;H01L31/0216;H01L31/0224;H01L31/028;H01L31/0352;H01L31/0392;H01L31/18;

国家 US

入库时间 2022-08-21 12:09:22

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3. PHOTORESISTOR ON SILICON-ON-INSULATOR SUBSTRATE AND PHOTODETECTORS INCORPORATING SAME [P] . EP3304578B1 . 2022-01-12

机译：绝缘体上的光致抗蚀剂底座和光电探测器相同

4. PHOTORESISTOR ON SILICON-ON-INSULATOR SUBSTRATE AND PHOTODETECTORS INCORPORATING SAME [P] . 欧洲知识产权局专利： EP3304578A4 . 2018-12-05

机译：绝缘体上硅基质上的光敏电阻和结合的光电检测器

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