首页> 外国专利> Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation

Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation

机译：用光学透明电极和氧化硅表面钝化形成可现场调节的碳化硅缺陷量子比特

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摘要

A method includes depositing a layer of silicon oxide onto a layer of silicon carbide; ion implanting the layer of silicon carbide, annealing the ion implanted layer of silicon carbide to produce defects within the layer of silicon carbide, performing photolithography using a mask layer on regions of the layer of silicon carbide to define regions for electrode deposition, removing the layer of silicon oxide from the layer of silicon carbide in the one or more regions for electrode deposition, forming one or more electrodes by depositing indium tin oxide (ITO) in each of the regions for electrode deposition, performing a first lift-off operation to remove the mask layer surrounding the electrodes, depositing a passivation and gate silicon oxide layer on top of the layer of silicon carbide and the electrodes, and performing a second lift-off operation to fabricate an optically transparent ITO gate between the electrodes.

机译：一种方法包括将一层氧化硅沉积到一层碳化硅上;离子注入碳化硅层，对离子注入的碳化硅层进行退火以在碳化硅层内产生缺陷，然后在碳化硅层的区域上使用掩模层执行光刻以定义用于电极沉积的区域，然后去除该层在一个或多个用于电极沉积的区域中从碳化硅层中分离出氧化硅，通过在每个用于电极沉积的区域中沉积铟锡氧化物（ITO）形成一个或多个电极，执行第一剥离操作以去除围绕电极的掩模层，在碳化硅层和电极的顶部上沉积钝化和栅氧化硅层，并执行第二剥离操作以在电极之间制造光学透明的ITO栅。

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公开/公告号US10262871B1

专利类型
公开/公告日2019-04-16

原文格式PDF
申请/专利权人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY;
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申请/专利号US201815884680
发明设计人 OSAMA NAYFEH;ANNA LEESE DE ESCOBAR;BRAD LIU;PATRICK SIMS;SAM CARTER;DAVID KURT GASKILL;TOM REINECKE;
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申请日2018-01-31
分类号H01L21/311;H01L21/027;H01L21/768;H01L21/04;H01L21/02;H01L23/532;C23C16/32;C30B25/10;C30B29/36;G02F1;G06N10;
国家 US
入库时间 2022-08-21 12:15:18

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