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Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device
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机译：具有腔体间隔物的半导体纳米线器件和制造用于半导体纳米线器件的腔体间隔物的方法
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摘要
Semiconductor nanowire devices having cavity spacers and methods of fabricating cavity spacers for semiconductor nanowire devices are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires including a discrete channel region. A common gate electrode stack surrounds each of the discrete channel regions of the plurality of vertically stacked nanowires. A pair of dielectric spacers is on either side of the common gate electrode stack, each of the pair of dielectric spacers including a continuous material disposed along a sidewall of the common gate electrode and surrounding a discrete portion of each of the vertically stacked nanowires. A pair of source and drain regions is on either side of the pair of dielectric spacers.
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