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In the manufacturing method of semiconductor epitaxial cormorant-III, qualitative forecasting method and quality evaluating method are illustrated
In the manufacturing method of semiconductor epitaxial cormorant-III, qualitative forecasting method and quality evaluating method are illustrated
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机译：在半导体外延corⅢ的制造方法中，说明了定性预测方法和质量评价方法。
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摘要
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor epitaxial wafer having gettering ability, in which occurrence of epitaxial defect is suppressed.SOLUTION: Based on at least one set of ion injection conditions, i.e., ion species, irradiation energy, dosage, beam current value, irradiation angle, wafer temperature at the time of irradiation, and the thickness of a protective oxide film, the depth direction distribution of hole concentration or interstitial element concentration formed in a semiconductor wafer after ion implantation is calculated for at least one parameter set, and then the ion injection conditions capable of suppressing the defects occurring in an epitaxial layer are determined from the calculation results. Ions are injected into the semiconductor wafer under the ion injection conditions thus determined, before the epitaxial layer is formed.SELECTED DRAWING: Figure 1
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