PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of reducing adhesion of foreign matter to a wafer by canceling wafer surface potential generated by plasma during suspension of plasma discharge.;SOLUTION: A plasma treatment apparatus comprises: a plasma treatment chamber 101; a high-frequency power source 105 for supplying high-frequency power for generating plasma; and an electrode 104 for electrostatic adsorption of a sample 103; a sample table 102 for placing the sample; a DC power supply 114 for applying DC voltage to the electrode; and a control device 116 for shifting the preset DC voltage in the negative direction by a first shift amount during plasma discharge and making the DC voltage having been shifted in the negative direction by the first shift amount be shifted in the positive direction by a second shift amount after termination of the plasma discharge. The first shift amount has a value for making electric potential of the surface of the sample at the time of the DC voltage having been shifted in the positive direction be 0 V. The second shift amount has a value calculated on the basis of floating potential by the plasma.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2019,JPO&INPIT
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