To provide a semiconductor light-emitting element having good characteristics, a semiconductor composite device including the semiconductor light-emitting element and a drive circuit for the semiconductor light-emitting element, an optical print head including the semiconductor composite device, and an image formation device including the optical print head.SOLUTION: A semiconductor light-emitting element (16) comprises: a p-type anode layer (11) that is a first semiconductor layer of a first conductivity type including a first terminal; a p-type carrier stop layer (15) provided on the p-type anode layer (11), and that is a semiconductor layer not containing Al; an n-type gate layer (12) provided on the carrier stop layer (15), and that is a second semiconductor layer of a second conductivity type; a p-type gate layer (13) provided on the n-type gate layer (12), and that is a third semiconductor layer of the first conductivity type including a third terminal; and an n-type cathode layer (14) provided on the p-type gate layer (13), and that is a fourth semiconductor layer of the second conductivity type including a second terminal.SELECTED DRAWING: Figure 2
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