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SOLAR CELL, MULTI-JUNCTION TYPE SOLAR CELL, SOLAR CELL MODULE, PHOTOVOLTAIC POWER GENERATION SYSTEM AND MANUFACTURING METHOD FOR SOLAR CELL

机译:太阳能电池,多结型太阳能电池,太阳能电池模块,光伏发电系统及太阳能电池的制造方法

摘要

To provide a solar cell, multi-junction type solar cell, solar cell module, photovoltaic power generation system and manufacturing method for solar cell, capable of improving conversion efficiency in a wide gap system.SOLUTION: A solar cell 100 includes a first electrode 2, a light absorption layer 3 containing at least Cu, In, Ga and Se, an n-type layer 4, and a second electrode 5. The light absorption layer 3 exists between the first electrode 2 and the n-type layer 4 and the n-type layer 4 exists between the light absorption layer 3 and the second electrode 5. In the light absorption layer 3, a percentage of elements of Cu, Ga and Se is at least 80 atom%. A total Ga concentration of the light absorption 3 is higher than a total In concentration of the light absorption layer 3, and an In concentration in a region on n-type layer 4 side of the light absorption layer 3 is higher than a Ga concentration in a region on n-type layer 4 side of the light absorption layer 3.SELECTED DRAWING: Figure 2
机译:为了提供一种太阳能电池,多结型太阳能电池,太阳能电池模块,光伏发电系统和太阳能电池的制造方法,能够提高宽间隙系统的转换效率。解决方案:太阳能电池100包括第一电极2。包括至少包含Cu,In,Ga和Se的光吸收层3,n型层4和第二电极5。光吸收层3存在于第一电极2和n型层4与第二电极5之间。在光吸收层3与第二电极5之间存在n型层4。在光吸收层3中,Cu,Ga和Se的元素的比例为80原子%以上。光吸收层3的总Ga浓度高于光吸收层3的总In浓度,并且光吸收层3的n型层4侧的区域中的In浓度高于Ga 2的Ga浓度。吸光层3的n型层4侧的区域。选择的图:图2

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