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TEST CONDITION DETERMINATION APPARATUS AND TEST CONDITION DETERMINATION METHOD

机译:试验条件测定装置及试验条件测定方法

摘要

To provide a technology that can determine appropriate test conditions.SOLUTION: A test condition determination device 1 includes a map creation unit 11, a breakdown voltage estimation unit 12, and a test condition determination unit 13. The map creation unit 11 creates a wafer map 25 for a chip 22 on the basis of the measurement value of the thickness of an epitaxial growth layer, the measurement value of the carrier concentration of the epitaxial growth layer, and the measurement result of crystal defects of the epitaxial growth layer and a substrate. The breakdown voltage estimation unit 12 estimates the breakdown voltage of the chip 22 on the basis of the wafer map 25. The test condition determination unit 13 determines a test condition to be performed on the chip 22 based on the estimation result of the breakdown voltage estimation unit 12.SELECTED DRAWING: Figure 1
机译:为了提供一种能够确定适当的测试条件的技术。解决方案:测试条件确定设备1包括图创建单元11,击穿电压估计单元12和测试条件确定单元13。图创建单元11创建晶片图。基于外延生长层的厚度的测量值,外延生长层的载流子浓度的测量值,以及外延生长层和基板的晶体缺陷的测量结果,以芯片25为基准,如图25所示。击穿电压估计单元12基于晶片图25估计芯片22的击穿电压。测试条件确定单元13基于击穿电压估计的估计结果确定要对芯片22执行的测试条件。单元12.选择的图纸:图1

著录项

  • 公开/公告号JP2019125637A

    专利类型

  • 公开/公告日2019-07-25

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP20180003978

  • 发明设计人 NAKAMURA TAKUYO;SAKAI MASA;

    申请日2018-01-15

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 12:24:06

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