MOLECULAR BEAM EPITAXY SYSTEM AND METHOD FOR REDUCING EXCESS FLUX IN A MOLECULAR BEAM EPITAXY SYSTEM

• 1. 分子束外延系统及分子束外延表面的温度控制方法 [P] . 中国专利： CN112160030A . 2021-01-01
• 2. 一种双快门分子束外延源炉系统及分子束外延设备 [P] . 中国专利： CN113463189A . 2021-10-01
• 3. MOLECULAR BEAM EPITAXY SYSTEM AND METHOD FOR REDUCING EXCESS FLUX IN A MOLECULAR BEAM EPITAXY SYSTEM [P] . 世界知识产权组织专利： WO2019086570A1 . 2019-05-09

  机译： 分子束外延系统和减少分子束外延系统中过剩通量的方法

• 4. Ellipsometer/polarimeter based process monitor and control system suitable for simultaneous retrofit on molecular beam epitaxy system RHEED/LEED interface system, and method of use [P] . 美国专利： US5582646A . 1996-12-10

  机译： 适用于分子束外延系统RHEED / LEED接口系统的同时改造的基于椭偏仪/旋光仪的过程监控系统和使用方法

• 5. Molecular beam epitaxy system and method [P] . 美国专利： US6773509B1 . 2004-08-10

  机译： 分子束外延系统和方法

• 1. Effects of Ga-flux on Optical Properties and Morphology of GaN Grown via Molecular Beam Epitaxy [J] . YANG Jing-hai, GONG Jie, FAN Hou-gang, 高等学校化学研究（英文版） . 2004,第006期
• 2. Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films [J] . S. Sienz, J.W. Gerlach, T. Hoeche, Journal of Crystal Growth . 2004,第1a3期
• 3. Comparison of organic thin films deposited by supersonic molecular-beam epitaxy and organic molecular-beam epitaxy: The case of titanyl phthalocyanine [J] . Walzer K, Toccoli T, Pallaoro A, Surface Science . 2006,第10期
• 4. Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy [J] . N. K. Cho, S. P. Ryu, J. D. Song, Applied Physics Letters . 2006,第13期
• 5. Comparison of the optical properties of Er{sup}(3+) doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam epitaxy (SSMBE) [C] . U. Hommerich, J. T. Seo, J. D. MacKenzie, Symposium on GaN and related alloys . 2000
• 6. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs. [D] . Chen, Tai-Chou Papo. 2008
• 7. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014
• 8. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014
• 9. Calibration Method for Group V Fluxes and Impact of V/III Flux Ratio on the Growth of InAs/InAsSb Type-II Superlattices by Molecular Beam Epitaxy. [R] . Li, H., Liu, S., Cellek, O. O., 2013

• 1. The scanning tunneling microscopy and spectroscopy of GaSb_(1-x)Bi_(x) films of a few-nanometer thickness grown by molecular beam epitaxy [J] . Fangxing Zha ,Qiuying Zhang ,Haoguang Dai . 半导体学报:英文版 . 2021,第9期
• 2. Electrical transport properties of cerium doped Bi_(2)Te_(3)thin films grown by molecular beam epitaxy [J] . Peng Teng ,Tong Zhou ,Yonghuan Wang . 半导体学报:英文版 . 2021,第12期
• 3. β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy [J] . Jiaqi Wei ,Kumsong Kim ,Fang Liu . 半导体学报：英文版 . 2019,第1期
• 4. Effects of Thermal Annealing on the Spectral Properties of GaAsBi Alloys Grown by Molecular Beam Epitaxy （MBE） [J] . Ahmed Mohammed Alkaoud . 材料科学与工程：中英文A版 . 2015,第007期
• 5. 一种用于分子束外延（ＭＢＥ）的小型ＥＣＲ离子源系统研制 [C] . 季天仁 . 中国电子学会第七届全国微波能应用学术会议 . 1995
• 6. 分子束外延生长InP基赝配高电子迁移率晶体管外延材料 [A] . 徐静波 . 2005