首页> 外国专利> LICOO2-CONTAINING SINTERED COMPACT, LICOO2-CONTAINING SPUTTERING TARGET, AND LICOO2-CONTAINING SINTERED COMPACT MANUFACTURING METHOD

LICOO2-CONTAINING SINTERED COMPACT, LICOO2-CONTAINING SPUTTERING TARGET, AND LICOO2-CONTAINING SINTERED COMPACT MANUFACTURING METHOD

机译：含LICOO2的烧结体，含LICOO2的溅射靶和含LICOO2的烧结体制造方法

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摘要

To realize a sintered compact containing LiCoO 2 which can increase a film deposition rate during sputtering, particularly even when a film is deposited only by pulsed DC discharge sputtering and can suppress the generation of flakes due to sputtering, and which is hardly cracked and is easy to handle. In the sintered compact containing LiCoO 2 , an average grain size is 10 to 40 µm, a relative density is 90% or more, and a resistivity is 100 ©·cm or less.

机译：实现含有LiCoO 2的烧结体，该烧结体可以提高溅射时的成膜速度，特别是即使仅通过脉冲DC放电溅射成膜，也可以抑制因溅射而产生的鳞片的产生，并且不易破裂且容易制造。处理。含有LiCoO 2的烧结体的平均粒径为10〜40μm，相对密度为90％以上，电阻率为100Ω·cm以下。

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公开/公告号EP3363927A4

专利类型
公开/公告日2019-03-06

原文格式PDF
申请/专利权人 KOBELCO RESEARCH INSTITUTE INC.;
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申请/专利号EP20160855174
发明设计人 TAKETOMI YUICHI;YOSHIDA SHINTARO;KANAMARU MORIYOSHI;
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申请日2016-08-18
分类号C04B35/01;C04B35/645;C23C14/34;H01M4/525;
国家 EP
入库时间 2022-08-21 12:27:48

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