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METHOD FOR FORMING A NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL FORMED ACCORDING TO THIS METHOD AND MICROELECTRONIC DEVICE COMPRISING SUCH MEMORY CELLS

机译：形成非易失性存储单元的方法，根据该方法形成的非易失性存储单元以及包括这种存储单元的微电子装置

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摘要

The invention relates to a method of forming (100) a nonvolatile memory cell for switching said memory cell (10) from an unformed state to a shaped state, said memory cell comprising an ordered stack of a lower electrode (12), a layer of insulating material (13) and an upper electrode (11). This forming method comprises a breakdown operation (130) in which at least one laser shot is emitted to the layer of insulating material (13) to render said layer of insulating material active by passing it from a highly resistant state (state HRS) to a weakly resistant state (LRS state), the memory cell being formed when the layer of insulating material is active. The invention also relates to a non-volatile memory cell (10) whose layer of insulating material (1 3) is made active by the forming method above.

机译：本发明涉及一种形成（100）非易失性存储单元的方法，该非易失性存储单元用于将所述存储单元（10）从未形成状态切换到成形状态，所述存储单元包括下电极（12）的有序堆叠，一层下层电极（12）。绝缘材料（13）和上电极（11）。该形成方法包括击穿操作（130），其中至少一个激光束被发射到绝缘材料层（13），以通过使绝缘材料层从高电阻状态（状态HRS）传递到绝缘层而使该绝缘材料层激活。弱电阻状态（LRS状态），当绝缘材料层处于活动状态时形成存储单元。本发明还涉及一种非易失性存储单元（10），其绝缘材料（1 3）层通过上述形成方法被激活。

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公开/公告号FR3064395A1

专利类型
公开/公告日2018-09-28

原文格式PDF
申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES;UNIVERSITE DAIX-MARSEILLE;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS;
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申请/专利号FR20170052398
发明设计人 ALEXIS KRAKOVINSKY;MARC BOCQUET;JEAN COIGNUS;VINCENZO DELLA MARCA;JEAN-MICHEL PORTAL;ROMAIN WACQUEZ;
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申请日2017-03-23
分类号G11C7/20;G11C11/21;H01L21/64;
国家 FR
入库时间 2022-08-21 12:32:50

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