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METHOD OF CONTROL OF CONSTRUCTION WITH MIS-STRUCTURE IN THIN-FILM TRANSISTORS AND SYSTEM FOR IMPLEMENTATION OF CONTROL

机译:薄膜晶体管中MIS结构的施工控制方法及实施系统

摘要

FIELD: images forming devices.;SUBSTANCE: invention relates to the field of liquid crystal display technology, in particular to the control of a structure with a MIS structure (metal-insulator-semiconductor structure) in TFT (thin-film transistors) and its system. Method for controlling a structure with a MIS structure (a metal-insulator-semiconductor structure) in a TFT (thin-film transistors) is disclosed. In the method for controlling the construction with a MIS structure in the TFT, a dielectric constant of silicon nitride in the MIS structure is calculated by calculation way is obtained. It is evaluated whether the dielectric constant of silicon nitride reaches a value specified in the TFT manufacturing procedure. Parameters of the MIS structure are adjusted so that after adjustment, the dielectric constant of the silicon nitride in the MIS structure of the value specified in the TFT manufacturing procedure is achieved.;EFFECT: technical result is to improve the functioning and stability of liquid crystal displays on thin-film transistors by effectively monitoring the construction of the MIS structure.;9 cl, 9 dwg
机译:薄膜晶体管及其MIS结构(金属-绝缘体-半导体结构)及其结构的控制技术领域本发明涉及液晶显示技术领域,尤其涉及TFT(薄膜晶体管)中具有MIS结构(金属-绝缘体-半导体结构)的结构及其控制系统。公开了一种用于控制TFT(薄膜晶体管)中的具有MIS结构(金属-绝缘体-半导体结构)的结构的方法。在控制TFT中具有MIS结构的构造的方法中,通过计算的方式获得了MIS结构中氮化硅的介电常数。评估氮化硅的介电常数是否达到TFT制造程序中指定的值。调整MIS结构的参数,以便在调整后达到TFT制造程序中指定值的MIS结构中氮化硅的介电常数。效果:技术成果是改善液晶的功能和稳定性通过有效监视MIS结构的构造在薄膜晶体管上显示; 9 cl,9 dwg

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