The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel comprising IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited over the source and drain electrodes, the active channel is exposed to an N 2 O or O 2 plasma. The interface between the active channel and the passivation or etch stop layers is altered or damaged during formation of the source and drain electrodes. The N 2 O or O 2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.
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