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PLASMA ATOMIC LAYER DEPOSITION METHOD OF SILICON THIN FILM CONTAINING NITROGEN AND DOUBLE PATTERNING METHOD OF SEMICONDUCTOR DEVICE
PLASMA ATOMIC LAYER DEPOSITION METHOD OF SILICON THIN FILM CONTAINING NITROGEN AND DOUBLE PATTERNING METHOD OF SEMICONDUCTOR DEVICE
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机译：含氮硅薄膜的等离子体原子层沉积方法和半导体器件的双图案化方法
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摘要
The present invention provides a plasma atomic layer deposition method of a silicon thin film containing nitrogen to perform a unit cycle at least once. A unit cycle comprises: a first step of supplying silylene ([1,3-bis(1,1-dimethylethyl)-4,4-dimethyl-1,3-diaza-2 silacyclopent-2-ylidene, tBu_Si]) as a source gas to a reactor charged with the substrate to adsorb the silylene on the substrate; and a second step of generating a plasma containing nitrogen (N) in the reactor to form a silicon unit film containing nitrogen on the substrate.;COPYRIGHT KIPO 2018
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