COMPOSITION FOR FORMING RESIST LOWER LAYER FILM FOR SEMICONDUCTOR RESIST LOWER LAYER FILM PROCESS FOR FORMING RESIST LOWER LAYER FILM AND PROCESS FOR PRODUCING PATTERNED SUBSTRATE

• 1. 低折射率膜形成用组合物、低折射率膜的形成方法以及通过该形成方法而形成的低折射率膜以及抗反射膜 [P] . 中国专利： CN103403112B . 2016.06.22
• 2. 低折射率膜形成用组合物、低折射率膜的形成方法以及通过该形成方法而形成的低折射率膜以及抗反射膜 [P] . 中国专利： CN103403112A . 2013-11-20
• 3. Film forming material, film forming composition for lithography, optical component forming material, resist composition, resist pattern forming method, permanent film for resist, radiation sensitive composition, method for producing amorphous film, lower layer film forming material for lithography , Composition for forming lower layer film for lithography, method for producing lower layer film for lithography, and method for forming circuit pattern [P] . 日本专利： JPWO2019004142A1 . 2020.07.02
• 4. PROCESS FOR FORMING PATTERN PROCESS FOR FORMING RESIST LOWER LAYER FILM COMPOSITION FOR FORMING RESIST LOWER LAYER FILM AND RESIST LOWER LAYER FILM [P] . 韩国专利： KR101811064B1 . 2017-12-20

  机译： 形成图案的过程形成抗蚀剂下层膜和抗蚀剂下层膜的组合物形成抗蚀剂下层膜和抗蚀剂下层的膜的组合物

• 5. PROCESS FOR FORMING PATTERN, PROCESS FOR FORMING RESIST LOWER LAYER FILM, COMPOSITION FOR FORMING RESIST LOWER LAYER FILM AND RESIST LOWER LAYER FILM [P] . 韩国专利： KR20120033269A . 2012-04-06

  机译： 形成图案的方法，形成抗蚀剂下层膜的过程，形成抗蚀剂下层膜和抗蚀剂下层膜的组合物

• 1. Formation of GaN Nanowires by Ammoniating Ga2O3 Films Deposited on Oxidized Al Layers on Si Substrate [J] . HU Li-jun, ZHUANG Hui-zhao, XUE Cheng-shan, 半导体光子学与技术（英文版） . 2007,第001期
• 2. Hybrid Self-Assembled Multilayer Films Formed by Alternating Layers of Keggin Polyoxometalates and 1, 10-DAD [J] . 中国化学快报（英文版） . 2003,第005期
• 3. Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications [J] . Zhi-Peng Wu, Jun Zhu, Li-Bin Fang 电子科技学刊：英文版 . 2017,第004期
• 4. Uniform and electroforming-free resistive memory devices based on solution-processed triple-layered NiO/AI_2O_3 thin films [J] . Wang Xiao Lin, Wen Chao, Liu Yuan, Applied Physics . 2019,第9期
• 5. GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off [J] . Yuhki FUJINO, Hiroki SETO, Masahide TAKEBE, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4A期
• 6. Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films [J] . Chandni Kumari, Ishan Varun, Shree Prakash Tiwari, AIP Advances . 2020,第2期
• 7. TYPES OF RESISTIVE LAYERS BASING ON ALLOYS OF TRANSITION METALS AND SEMICONDUCTORS PRODUCED USING CHEMICAL REDUCTION METHOD AND APPLIED FOR THE PRODUCTION OF FIXED FILM RESISTORS [C] . Zbigniew Pruszowski, Piotr Kowalik, Krzysztof Waczynski European Microelectronics Packaging Interconnection Symposium . 2002
• 8. The Effect of Hot Fill and Hold Processing on the Performance of Multilayer Packaging Films [D] . Johnson, Meredith Leigh. 2018
• 9. Modeling of Catalytic Centers Formation Processes during Annealing of Multilayer Nanosized Metal Films for Carbon Nanotubes Growth [O] . Oleg I. Il’in, Nikolay N. Rudyk, Alexandr A. Fedotov, 2020
• 10. Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films [O] . Chandni Kumari, Ishan Varun, Shree Prakash Tiwari, 2020

• 1. Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications [J] . Zhi-Peng Wu ,Jun Zhu ,Li-Bin Fang . 电子科技学刊 . 2017,第004期
• 2. Ultrahigh frequency properties of discontinuous CoFeB/SiO_2 multilayer films with high resistivity [J] . 江建军 ,马强 ,别少伟 . 中国有色金属学会会刊：英文版 . 2007,第A02期
• 3. 珠江口盆地琼海凸起低幅-低阻油田的形成条件及成藏特征 [C] . 甘军 ,张迎朝 ,田辉 . 第十四届全国有机地球化学学术会议 . 2013
• 4. GZO透明低阻膜材料的制备及其性能研究 [A] . 程慧 . 2017