首页> 外国专利> InP InP/ZnS / METHOD OF PREPARING InP QUANTUM DOT AND METHOD OF PREPARING InP/ZnS CORE/SHELL QUANTUM DOT

InP InP/ZnS / METHOD OF PREPARING InP QUANTUM DOT AND METHOD OF PREPARING InP/ZnS CORE/SHELL QUANTUM DOT

机译:InP InP / ZnS / InP量子点的制备方法和InP / ZnS核/壳量子点的制备方法

摘要

The present invention relates to a method for preparing indium phosphide (InP) quantum dots and a method for preparing InP/ZnS core/shell quantum dots. A method for preparing InP quantum dots comprises the following steps: a) inputting and mixing an indium precursor and a solvent in a reactor, and heating the mixture to be evacuated; and b) adding white phosphorus to the reactor in the step a), pyrolyzing the mixture prepared in the step a) and the white phosphorus and synthesizing InP quantum dots.
机译:本发明涉及磷化铟(InP)量子点的制备方法和InP / ZnS核/壳量子点的制备方法。一种制备InP量子点的方法,包括以下步骤:a)在反应器中输入铟前驱物和溶剂并混合,并加热待抽空的混合物; b)在步骤a)中向反应器中加入白磷,热解步骤a)中制备的混合物和白磷,并合成InP量子点。

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