首页> 外国专利> 6 Preparation method of Porous Silica substrate structure supported Nanoscale Zero-Valent Iron Porous Silica substrate structure made by the same and Their Application for the Reductive Removal of Hexavalent Chromium Heavy Metal Present

6 Preparation method of Porous Silica substrate structure supported Nanoscale Zero-Valent Iron Porous Silica substrate structure made by the same and Their Application for the Reductive Removal of Hexavalent Chromium Heavy Metal Present

机译:6多孔二氧化硅基体结构支撑的纳米级零价铁多孔二氧化硅基体结构的制备方法及其在还原脱除六价铬重金属中的应用

摘要

The present invention relates to a manufacturing method of a nanoscale zerovalent iron-supported porous silica structure, and the nanoscale zerovalent iron-supported porous silica structure manufactured thereby. More specifically, the present invention relates to a manufacturing method of a nanoscale zerovalent iron-supported porous silica structure, the manufacturing method comprising the steps of preparing a porous silica with a specific form by using a polymer template, and supporting nanoscale zerovalent iron (NZVI) on the surface of the porous silica, thereby reforming the porous silica, the nanoscale zerovalent iron-supported porous silica structure manufactured thereby, and removal of hexavalent chromium using the NZVI-supported porous silica structure. The porous silica structure having NZVI supported on the surface thereof according to the present invention enables the manufacturing method and characteristics of the structure to solve problems such as drop in reduction removal efficiency and the like due to easy surface oxidation of the NZVI as well as an agglomeration phenomenon of nanoparticles basically owned by the NZVI. Further, the porous silica structure having NZVI supported on the surface thereof according to the present invention exhibits excellent efficiency for reduction removal of hexavalent chromium when applying the porous silica structure in the treatment of an aqueous solution containing hexavalent chromium heavy metals.
机译:纳米级零价铁负载的多孔二氧化硅结构体的制造方法技术领域本发明涉及一种纳米级零价铁负载的多孔二氧化硅结构体的制造方法,以及由此制造的纳米级零价铁负载的多孔二氧化硅结构体。更具体地,本发明涉及一种纳米级零价铁负载的多孔二氧化硅结构的制造方法,该制造方法包括以下步骤:通过使用聚合物模板制备具有特定形式的多孔二氧化硅;以及负载纳米级零价铁(NZVI)。 )在多孔二氧化硅的表面上进行重整,从而对多孔二氧化硅进行重整,从而制得由此制备的纳米级零价铁负载的多孔二氧化硅结构,并使用NZVI负载的多孔二氧化硅结构除去六价铬。根据本发明,在其表面上负载有NZVI的多孔二氧化硅结构使得该结构的制造方法和特征能够解决由于NZVI的容易的表面氧化以及还原引起的还原去除效率降低等问题。 NZVI基本上拥有的纳米颗粒的团聚现象。此外,当在含有六价铬重金属的水溶液的处理中应用该多孔二氧化硅结构时,根据本发明在其表面上负载有NZVI的多孔二氧化硅结构显示出优异的还原去除六价铬的效率。

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