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GAN-BASED ENHANCED HEMT DEVICE BASED ON SI SUBSTRATE AND MANUFACTURING METHOD THEREFOR
GAN-BASED ENHANCED HEMT DEVICE BASED ON SI SUBSTRATE AND MANUFACTURING METHOD THEREFOR
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机译：基于SI基体的基于GAN的增强型HEMT装置及其制造方法
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摘要
Provided are a GaN-based enhanced HEMT device based on a Si substrate and a manufacturing method therefor. The device comprises: a Si substrate (101), an AlN nucleating layer (102), AlGaN transition layers (103-105), an AlGaN buffer layer (106), a low-temperature AIN inserting layer (107), an AlGaN main buffer layer (108), an AlGaN/GaN super-lattice layer (109), a GaN channel layer (110) and an AlGaN barrier functional layer (111), wherein a source electrode (112) and a drain electrode (113) are on two sides of a top end, a gate electrode (116) is in the middle of the top end, the middle AlGaN barrier functional layer (111) is etched through to form a groove, a bottom part of the groove is in contact with the GaN channel layer (110), a passivation protection layer (114) and a gate dielectric layer (115) are deposited at the bottom part of the groove, and the gate electrode (116) is above the gate dielectric layer (115). The device has a high threshold voltage, a high breakdown voltage, a high current density and great pinch-off characteristics, and the characteristics of a simple manufacturing process and good repeatability, and is suitable for application in high-voltage high-power electronic devices.
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