首页> 外国专利> CONFLICT RESOLVABLE DUAL PORT SRAM MEMORY DESIGN IN QUANTUM DOT CELLULAR AUTOMATA

CONFLICT RESOLVABLE DUAL PORT SRAM MEMORY DESIGN IN QUANTUM DOT CELLULAR AUTOMATA

机译:量子点元胞自动机中的冲突可分辨双端口SRAM存储器设计

摘要

Data conflict resolvable Dual port SRAM memory design is invented in Quantum dot Cellular Automata(QCA) technology. The functionality of dual port memory is realized with concurrent access of memory array with parallel data lines. Read-Write, Write- Write conflicts are resolved with a priority bit. Priority is uniquely calculated only when both the port request for same memory location access i.e. concurrent Read-Write, concurrent Write-Write operation request. When the same memory location is selected, only the signals of prior port is allowed and of other port is discarded. While the read operation is requested for both the port at same or different memory locations, have no data conflicts and both the ports are allowed to perform read operation.
机译:解决数据冲突的双端口SRAM存储器设计是在量子点元胞自动机(QCA)技术中发明的。双端口存储器的功能是通过并行数据线并行访问存储器阵列来实现的。通过优先级位解决读写冲突。仅当两个端口访问同一内存位置的请求即并发读写时,并发写入操作时,才唯一地计算优先级。当选择了相同的内存位置,只有事先端口的信号是允许的,其他端口的被丢弃。虽然请求在相同或不同存储位置的两个端口进行读取操作,但没有数据冲突,并且两个端口都可以执行读取操作。

著录项

  • 公开/公告号IN201831015539A

    专利类型

  • 公开/公告日2018-05-11

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN201831015539

  • 发明设计人 ARINDAM SADHU;KUNAL DAS;DEBASHIS DE;

    申请日2018-04-24

  • 分类号H03K19/195;

  • 国家 IN

  • 入库时间 2022-08-21 12:51:45

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